Growth Characteristics and Properties of Yttrium Oxide Thin Films by Atomic Layer Deposition from Novel Y(iPrCp)_3 Precursor and O_3

摘要

A novel atomic layer deposition (ALD) route of Y_2O_3 thin films was developed and demonstrated utilizing Y(iPrCp)_3 and O_3. The ALD growth characteristics were investigated by varying precursor dosage, reactor temperature, and number of deposition cycles. The growth rate of Y_2O_3 was found to be 0.17 ± 0.01 nm/cycle within the ALD temperature window of 245 - 300 ℃. The resulting films were analyzed with spectral ellipsometry and x-ray photoelectron spectroscopy, in order to determine stoichiometry, impurity, annealing behavior, and refractive index. The results of this work demonstrate the potential for suggesting Y(iPrCp)_3 as a suitable ALD precursor and Ar + beam as an effective means of removing surface Y(OH)_3 on Y_2O_3 films.