NON-POLAR (Al, B, In, Ga)N QUANTUM WELL, HETEROSTRUCTURE MATERIAL, AND DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a non-polar (Al, B, In, and Ga)N quantum well, heterostructure material, and a nitride semiconductor device.SOLUTION: One or more non-polar (1120)a-plane GaN layer is grown on an r-plane (1102) sapphire substrate by utilizing metallorganic chemical vapor deposition MOCVD. The non-polar (1120)a-plane GaN layer comprises a template for producing a non-polar (Al, B, In, and Ga)N quantum well, heterostructure material, and a device.SELECTED DRAWING: Figure 1