Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-κ dielectric material

摘要

Gate-defined quantum devices in an InGaAs/InP heterostructure are achieved by introducing a HfO₂ layer as the gate dielectric. The high-kappa layer is grown by atomic layer deposition and the fabrication process is described in detail. Electrical measurements at low temperature reveal the Coulomb blockade effect. Magnetotransport characterization is also carried out for the devices made from this promising spintronic material and the current peaks are found to shift in spin pairs with the applied B-field perpendicular to the wafer.