Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-κ dielectric

摘要

A gate-defined double quantum dot with two integrated quantum point contact charge sensors isnrealized in an InGaAs/InP heterostructure by employing a high-u0001 HfO2 thin film as gate dielectricnand a polymer bridge technique. Clear honeycomb patterns are observed in the measured chargenstability diagram of the double quantum dot and charge sensing signals of the quantum pointncontacts. It is also found that the quantum point contact charge sensors can detect the charge statesnin the double quantum dot even in the condition that the direct transport signal is not visible.