SiO2 thin films produced by atomic layer deposition at room temperature

摘要

The present invention is for depositing silicon oxide on a substrate comprising at least three precursors, silicon tetrachloride, water and one Lewis base agent, preferentially ammonia, and carried out at room temperature. The present invention relates to an atomic layer deposition method. The method includes exposing (a) the one Lewis base agent, (b) the silicon tetrachloride, and (c) the water onto the substrate during an exposure time. It should be noted that the method includes at least one step of purging with nitrogen gas during the purge time after each of steps (a), (b) and (c). The present invention further includes silicon oxides that are notable in that they contain low levels of chlorine contaminants, are highly porous, and the pores are preferentially micropores, mesopores or nanopores. Relating to the membrane. [Selection] Figure 1