Method for growing beta-phase gallium oxide (β-Ga 2 O 3) single crystal from metal contained in metal crucible

摘要

A method of growing a beta-phase gallium oxide (β-Ga 2 O 3) single crystal from a melt contained in a metal crucible surrounded by a heat insulating material and heated by a heating device. The growth atmosphere supplied to the growth furnace is such that the oxygen concentration is below the melting temperature (MT) of Ga2O3 or at the melting temperature (MT), or in a concentration range (SC) of 5 to 100 vol% after complete melting of the Ga2O3 starting material. Has a variable oxygen concentration or partial pressure to reach a certain growth oxygen concentration value (C2, C2 ′, C2 ″), which minimizes the formation of metal gallium content and thereby eutectic formation with the metal crucible It is adapted to be During the crystal growth step of the β-Ga2O3 single crystal from the melt at the growth temperature (GT), the growth oxygen concentration values (C2, C2 ′, C2 ″) are maintained within the oxygen concentration range (SC). The