Method for growing β phase of gallium oxide (β-Ga2O3) single crystals from the melt contained within a metal crucible

摘要

A method for growing beta phase of gallium oxide (β-Ga₂O₃) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2′, C2″) in the concentration range (SC) of 5-100 vol. % below the melting temperature (MT) of Ga₂O₃ or at the melting temperature (MT) or after complete melting of the Ga₂O₃ starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the β-Ga₂O₃ single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2′, C2″) is maintained within the oxygen concentration range (SC).