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Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga2O3 Single Crystals with the Czochralski Method

机译：内部辐射对全球模拟过程参数的效果与CZOCHRALSKI方法生长大型批量β-GA2O3单晶的全局模拟

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Xia Tang; Botao Liu; Yue Yu; Botao Song; Pengfei Han; Sheng Liu; Bing Gao;
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5. Numerical simulations of Czochralski growth of single crystals. [D] . Xiao, Qiang. 1994

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Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga2O3 Single Crystals with the Czochralski Method

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