Method for growing beta phase of gallium oxide -Ga2O3 single crystals from the melt contained within a metal crucible

摘要

Insulation gallium oxide on the beta heated by a heater from a melt contained in a crucible surrounded by a metal (β-Ga ₂ O ₃₎ is provided a method of growing a single crystal. An oxygen concentration range (SC) of 5 to 100% by volume, at an oxygen concentration below the melting temperature (MT) of Ga ₂ O ₃ , or at the melting temperature (MT), or after completion of the melting of the Ga ₂ O ₃ starting material, The growth atmosphere supplied to the growth furnace has a variable oxygen concentration or a partial pressure so as to reach the growth oxygen concentration values (C2, C2 ', C2'') in the metal crucible, / RTI During the crystal growth step of the β-Ga ₂ O ₃ single crystal from the melt at the growth temperature (GT), the growth oxygen concentration values (C2, C2 ', C2 ") are maintained in the oxygen concentration range (SC).