A method for growing a beta-phase gallium oxide (β-Ga2O3) single crystal from a metal contained in a metal crucible.

摘要

PROBLEM TO BE SOLVED: To provide a condition for growing a β-Ga2O3 single crystal from a melt, which minimizes Ga2O3 decomposition and eliminates damage to a metal crucible. A growth atmosphere supplied to a growth furnace has an oxygen concentration in the concentration range of less than the melting temperature (MT) or melting temperature (MT) of Ga2O3, or 5 to 100% by volume after complete melting of the Ga2O3 starting material. It has a variable oxygen concentration or partial pressure to reach the growth oxygen concentration values (C2, C2', C2'') at (SC), which is the co-production of the amount of metallic gallium and the resulting metal pot. Fitted to minimize crystallization. During the crystal growth step of the β-Ga2O3 single crystal from the melt at the growth temperature (GT), the growth oxygen concentration values (C2, C2', C2'') are maintained within the above oxygen concentration range (SC). Conditions for growing a β-Ga2O3 single crystal. [Selection diagram] Fig. 2