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Method for forming graphene oxide / reduced graphene oxide junction

机译:形成氧化石墨烯/还原氧化石墨烯结的方法

摘要

A deposition step of depositing a layer of graphene oxide; and selectively exposing the deposited graphene oxide region to an electromagnetic wave to form a region of reduced graphene oxide adjacent to an adjacent unexposed region of graphene oxide. Forming the graphene oxide region and the adjacent reduced graphene oxide region to form a junction therebetween to form a graphene oxide / reduced graphene oxide junction layer; and the deposition step and the exposure step. Repeatedly, one or more layers of graphene oxide are further formed on the underlying graphene oxide / reduced graphene oxide junction layer, and each of the junctions of the graphene oxide / reduced graphene oxide layer as a whole is three-dimensionally formed. Creating an extended device. [Selection] Figure 5
机译:沉积一层氧化石墨烯的沉积步骤;选择性地将沉积的氧化石墨烯区域暴露于电磁波,以形成与相邻的未暴露的氧化石墨烯区域相邻的还原的氧化石墨烯区域。形成氧化石墨烯区域和相邻的还原的氧化石墨烯区域以在它们之间形成结,从而形成氧化石墨烯/还原的氧化石墨烯结层。以及沉积步骤和曝光步骤。重复地,在下面的氧化石墨烯/还原的氧化石墨烯接合层上进一步形成一层或多层氧化石墨烯,并且整体上三维地形成了氧化石墨烯/还原的氧化石墨烯层的每个结。创建扩展设备。 [选择]图5

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