Nonvolatile memory (NVM) using adaptive write operations

摘要

A method of performing a write operation on memory cells (202) of a memory array (201) includes applying a first plurality of pulses (402) of the write operation on the memory cells in accordance with a first predetermined ramp rate, wherein the first plurality of pulses is a predetermined number of pulses; comparing a threshold voltage of a subset of the memory cells with an interim verify voltage; and if a threshold voltage of any of the subset of memory cells fails the comparison with the interim verify voltage, continuing the write operation by applying a second plurality of pulses (406) on the memory cells in accordance with a second predetermined ramp rate which has an increased ramp rate as compared to the first predetermined ramp rate.