NON-VOLATILE MEMORY NVM WITH ADAPTIVE WRITE OPERATIONS

摘要

The method of performing a write operation on the memory cells 202 of the memory array 201 is the step of applying a first plurality of pulses 402 of a write operation on the memory cells according to a first predetermined ramp rate, The applying step, wherein the plurality of pulses are a predetermined number of pulses; Comparing a threshold voltage of the subset of memory cells with a temporary verify voltage; If any threshold voltage of the subset of memory cells fails to compare with the temporary verification voltage, a second plurality of pulses according to a second predetermined ramp rate having an increased ramp rate compared to the first predetermined ramp rate And continuing the write operation by applying 406 onto the memory cells.