NON-VOLATILE MEMORY (NVM) WITH ADAPTIVE WRITE OPERATIONS

摘要

A method for performing a write operation on memory cells (202) of a memory array (201) comprises the steps of: applying a first plurality of pulses (402) of the write operation on the memory cells in accordance with a first predetermined ramp rate, wherein the first pulses are predetermined number of pulses; comparing a threshold voltage of a subset of the memory cells with an interim verify voltage; and if a threshold voltage of any of the subset of the memory cells fails the comparison with the interim verify voltage, continuing the write operation by applying a second plurality of pulses (406) on the memory cells in accordance with a second predetermined ramp rate which has an increased ramp rate as compared with the first predetermined ramp rate. [Reference numerals] (402) Initial ramp rate; (403) Determine a ramp rate; (404) Regular ramp rate; (406) Increased ramp rate; (408) Peak voltage; (410) Time-out