Monolithic integration technique for fabricating photodetectors with transistors on the same substrate

摘要

Examples of various techniques introduced herein include, but are not limited to, mesa height adjustment techniques during shallow trench isolation formation, transistors according to the first technique, and multiple absorption layer techniques. . As described further below, the techniques introduced herein may include one or more conventional limitations associated with fabricating PDs and transistors on the same substrate, such as the reliability, performance, and process temperature issues discussed above. Various aspects that can be solved or mitigated individually and / or collectively. [Selection] Figure 6A