Method for reducing switch on state resistance of switched-capacitor charge pump using self-generated switching back-gate bias voltage

摘要

Switched-capacitor charge pump implemented in FDSOI process technology and a method of forming them are provided. Embodiments include providing a FDSOI substrate; providing a plurality of stages of a first and a second pair of an NFET and PFET over the FDSOI substrate coupled between an input terminal and an output terminal, the first and second pair of each stage being opposite each other; providing a plurality of a first and a second capacitor over the FDSOI substrate, each first and second capacitor connected to a first and a second pair of NFET and PFET of a stage, respectively; connecting a back-gate of a NFET and a back-gate of a PFET of each pair; connecting the connected NFET and PFET back-gates to a front-gate of the pair; and connecting a source of each pair to a front gate of an opposite pair within the stage.