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Method for forming at least one electrical discontinuity in an interconnection part of an integrated circuit without addition of additional material, and corresponding integrated circuit
Method for forming at least one electrical discontinuity in an interconnection part of an integrated circuit without addition of additional material, and corresponding integrated circuit
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机译:在集成电路的互连部分中形成至少一个电中断而不添加额外材料的方法以及相应的集成电路
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摘要
An integrated circuit includes an interconnection part with a via level situated between a lower metallization level and an upper metallization level. The lower metallization level is covered by an insulating encapsulation layer and an inter-metallization level insulating layer. An electrical discontinuity is provided between a via of the via level and a metal track of the lower metallization level. The electrical discontinuity is formed by an additional insulating layer having a material composition identical to that of the inter-metallization level insulating layer. The electrical discontinuity is situated between a bottom of the via and a top of the metal track, with the discontinuity being bordered by the insulating encapsulation layer.
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