首页>
外国专利>
POWER TRENCH MOSFET WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING (UIS) PERFORMANCE AND PREPARATION METHOD THEREOF
POWER TRENCH MOSFET WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING (UIS) PERFORMANCE AND PREPARATION METHOD THEREOF
展开▼
机译:具有改善的非钳位电感开关(uis)性能的功率沟道MOSFET及其制备方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A trench type power semiconductor device with improved breakdown voltage and UIS performance and a method for preparation the device are disclosed. The trench type power semiconductor device includes a first contact hole formed in a mesa in the active area and a second contact hole formed in a mesa in an active to termination intermediate area, where the first contact hole is deeper and wider than the second contact hole. The method comprises the steps of providing a semiconductor substrate, etching an epitaxial layer, depositing a conductive material, depositing an insulation passivation layer and etching through the insulation passivation layer.
展开▼