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Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof
Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof
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机译:具有改善的非钳位电感开关性能的功率沟槽MOSFET及其制备方法
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摘要
A trench type power semiconductor device with improved breakdown voltage and UIS performance and a method for preparation the device are disclosed. The trench type power semiconductor device includes a first contact hole formed in a mesa in the active area and a second contact hole formed in a mesa in an active to termination intermediate area, where the first contact hole is deeper and wider than the second contact hole.
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