One-time programmable memory using rupturing of gate insulation

摘要

Embodiments relate to an anti-fuse device with a transistor. The transistor may be a FinFET. The anti-fuse device includes a first electrode, an insulating layer, and a second electrode. The gate of the transistor may be formed in a same layer as the first electrode. The gate insulating layer on the gate of the transistor may be formed in a same layer as the insulating layer. The second electrode may be formed in a same layer as a local interconnect or a via and overlap the first electrode vertically over the insulating layer.