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SURFACE MACHINING METHOD FOR SINGLE CRYSTAL SIC SUBSTRATE, MANUFACTURING METHOD THEREOF, AND GRINDING PLATE FOR SURFACE MACHINING SINGLE CRYSTAL SIC SUBSTRATE
SURFACE MACHINING METHOD FOR SINGLE CRYSTAL SIC SUBSTRATE, MANUFACTURING METHOD THEREOF, AND GRINDING PLATE FOR SURFACE MACHINING SINGLE CRYSTAL SIC SUBSTRATE
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机译:单晶硅衬底的表面加工方法,其制造方法以及用于单晶硅衬底的表面磨削板
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摘要
A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.
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