Self-Aligned Triple Patterning Process Utilizing Organic Spacers

摘要

A method to implement self-aligned triple patterning techniques for the processing of substrates is provided. In one embodiment, a self-aligned triple processing technique utilizing an organic spacer is provided. The organic spacer may be formed utilizing any of a wide range of techniques including, but not limited to, plasma deposition and spin on deposition. In one embodiment, the organic spacer may be formed via a cyclic deposition etch process. In one embodiment, the self-aligned triple patterning technique may be utilized to form patterned structures on a substrate at pitches of 26 nm or less.