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Switching element, switching element array, and resistive random access memory including switching element, and methods of manufacturing the same
Switching element, switching element array, and resistive random access memory including switching element, and methods of manufacturing the same
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机译:开关元件,开关元件阵列以及包括该开关元件的电阻式随机存取存储器及其制造方法
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摘要
A first electrode and an insulation material layer are sequentially formed over a substrate. A doping mask pattern is formed over the insulation material layer. The doping mask pattern exposes a portion of the insulation material layer. Dopants are injected into the exposed portion of the insulation material layer. The doping mask pattern is removed. A second electrode layer is formed over the insulation material layer. One or more pillar-shaped structures, each of which includes a second electrode, an insulation layer and a first electrode formed by respectively patterning the second electrode layer, the insulation material layer, and the first electrode layer. Each of the one or more pillar-shaped structures includes, in the insulation layer, a part of the exposed portion of the insulation material layer that is doped with the dopants. A threshold switching operation is performed in a region doped with the dopants of the insulation layer.
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