Nonvolatile memory device and methods of operating the same including floating a common source line based on at least one of a program command and an access address

摘要

A nonvolatile memory device includes a common source line connected to a plurality of cell strings. The cell strings each include a first selection transistor coupled to a string selection line, a second selection transistor coupled to a ground selection line, and a plurality of memory cells coupled to a plurality word-lines. The second selection transistors are commonly coupled to the common source line. A method of operating the nonvolatile memory device includes receiving a program command and an access address, and performing a program operation on a selected page according to the access address while floating the common source line. The common source line is floated based on at least one of the program command and the access address.