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Semiconductor device comprising a channel region of a transistor with a crystalline oxide semiconductor and a specific off-state current for the transistor
Semiconductor device comprising a channel region of a transistor with a crystalline oxide semiconductor and a specific off-state current for the transistor
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机译:半导体器件,包括具有晶体氧化物半导体的晶体管的沟道区和该晶体管的特定截止态电流
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摘要
A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. A reset transistor is omitted by initializing the signal charge storage portion to a cathode potential of a photoelectric conversion element portion in the solid-state image sensor. When a thin film transistor which includes an oxide semiconductor layer and has an off-state current of 1×10−13 A or less is used as a transfer transistor of the solid-state image sensor, the potential of the signal charge storage portion is kept constant, so that a dynamic range can be improved. When a silicon semiconductor which can be used for a complementary metal oxide semiconductor is used for a peripheral circuit, a high-speed semiconductor device with low power consumption can be manufactured.
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