Method for performing selective etching of a semiconductor material in solution

摘要

A method for performing selective etching of a semiconductor material in solution having the following successive steps: a) providing a substrate having a layer of amorphous semiconductor material to be etched and a layer of crystalline semiconductor material; b) oxidizing the surfaces of the layers of amorphous semiconductor material and of crystalline semiconductor material so as to form a first protective layer at the surface of the amorphous semiconductor material and a second protective layer at the surface of the crystalline semiconductor material; c) etching the first protective layer and the layer of amorphous semiconductor material with an alkaline etching solution, the etch rate v₁ of the first protective layer being higher than the etch rate v₂ of the second protective layer.