Single-electron transistor and its fabrication method

摘要

Single-electron transistor comprising at least:first semiconductor portions forming source and drain regions,a second semiconductor portion forming at least one quantum island,third semiconductor portions forming tunnel junctions between the second semiconductor portion and the first semiconductor portions,a gate and a gate dielectric located on at least the second semiconductor portion,in which a thickness of each of the first semiconductor portions is greater than the thickness of the second semiconductor portion, and in which a thickness of the second semiconductor portion is greater than the thickness of each of the third semiconductor portions.