COMPOUND, THIN-FILM-FORMING RAW MATERIAL, THIN-FILM-FORMING RAW MATERIAL FOR ATOMIC-LAYER DEPOSITION METHOD, AND PROCESS FOR PRODUCING THIN FILM

摘要

A thin-film-forming raw material which comprises a compound represented by general formula (1)(wherein R¹ to R⁶ each independently represent a hydrogen atom or a linear or branched C_1-4 alkyl group; R⁷, R⁸, and R⁹ each represent a linear or branched C_1-4 alkyl group; and M¹ represents a zirconium or titanium atom). It is preferable that one of R¹ to R⁵ be a methyl group and the remaining four be hydrogen atoms. It is preferable that R⁶ and R⁷ be each a methyl or ethyl group. It is preferable that R⁸ and R⁹ be each a methyl or ethyl group.