METHODS FOR GROWING III-V COMPOUND SEMICONDUCTORS FROM DIAMOND-SHAPED TRENCHES ON SILICON AND ASSOCIATED DEVICES

摘要

Group III-V material metamorphic buffer template substrates are provided herein. Substrates as described herein can comprise an exact oriented (100) silicon (Si) substrate comprising diamond-shaped trenches, which facilitates defect trapping at the group III-V material, silicon interface, wherein diamond-shaped trenches are bounded at least in part by four (111) Si surfaces in the exact oriented (100) Si substrate, and in which group III-V semiconductor materials can be deposited. In addition, process are describe for forming diamond-shaped trenches, depositing group III-V semiconductor materials in the diamond-shaped trenches, and fabricating group III-V semiconductor thin films therewith.