METHOD FOR MANUFACTURING LARGE-AREA METAL CHALCOGENIDE THIN FILM, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE COMPRISING METAL CHALCOGENIDE THIN FILM MANUFACTURED THEREBY

摘要

The present invention relates to a method for manufacturing a large-area metal chalcogenide thin film and a device comprising the large-area metal chalcogenide thin film manufactured thereby, the method comprising the steps of: preparing a polymer-precursor solution; coating a substrate with the polymer-precursor solution; and heat-treating the substrate coated with the polymer-precursor solution. A high-quality, large-area metal chalcogenide thin film having a uniform thickness and composition can be manufactured at low cost according to the manufacturing method of the present invention.