Zero-defect sputter deposition metallization method for high-volume manufacturing of grafted multilayer thin film modules

摘要

The implementation of constant-power power supplies communicating with a magnet control system has been demonstrated to be an optimum way to uniformly deposit metal from an inline sputter system. This is an inline DC magnetron sputter deposition process. High equipment reliability (<99% uptime), low defect levels (>4 p.p.m.), and the use of 12-mm-thick targets for metallizing 3000 ft/sup 2/ of substrate area between cathode changes have been achieved. The system is configured to provide layered metal systems with discrete or phased interfaces. Plasma optimization via real-time magnetron control and magnetic field suppression at the beginning of the target life has enabled deposit thickness (and sheet resistivity) variation to be automatically controlled to +or-5% over the 435-in/sup 2/ deposition area throughout the life of the targets.