首页> 外国专利> A multilayer back electrode for a photovoltaic thin film solar cell, use of the multilayer back electrode for the production of thin film solar cells and modules, photovoltaic thin film solar cells and modules containing the multilayer back electrode, and a method of manufacturing photovoltaic thin film solar cells and modules

A multilayer back electrode for a photovoltaic thin film solar cell, use of the multilayer back electrode for the production of thin film solar cells and modules, photovoltaic thin film solar cells and modules containing the multilayer back electrode, and a method of manufacturing photovoltaic thin film solar cells and modules

机译:用于光伏薄膜太阳能电池的多层背面电极,该多层背面电极在生产薄膜太阳能电池和模块中的用途,包含该多层背面电极的光伏薄膜太阳能电池和模块以及光伏薄膜的制造方法太阳能电池和组件

摘要

The present invention relates to a multilayer back electrode for a photovoltaic thin-film solar cell, comprising, in this order, at least one bulk back electrode layer, at least one, in particular ohmic, contact layer, obtained by applying at least one layer or essentially comprising at least one metal chalcogenide, wherein the metal of the metal chalcogenide, in particular selected from molybdenum, tungsten, tantalum, cobalt and / or niobium and that the chalcogen of the metal chalcogenide, in particular selected from selenium and / or sulfur, by physical or chemical vapor deposition using at least one Metallchalkogenidquelle or obtained by applying at least one metal layer (first layer), wherein the first layer and the bulk back electrode layer in their composition, in particular in the respectively used metal or, if more metals in the metal layer and the bulk back electrodes With regard to at least one, in particular all of these metals, disagree, containing or substantially of Mo, W, Ta, Nb and / or Co by physical vapor deposition using at least one metal source and treating this metal layer at temperatures above 300 ° C. , preferably above 350 ° C in a chalcogen, in particular selenium and / or sulfur atmosphere and / or in a Chalkogenwasserstoff-, in particular a H2S and / or H2Se atmosphere, to form a Metallchalkogenidlage (second layer). The invention furthermore relates to the use of this multilayer back electrode for the production of thin-film solar cells and thin-film solar modules, photovoltaic thin-film solar cells and modules comprising the multilayer back electrode according to the invention and to a method for producing thin-film photovoltaic solar cells and modules.
机译:用于光伏薄膜太阳能电池的多层背电极技术领域本发明涉及一种用于光伏薄膜太阳能电池的多层背电极,该多层背电极依次包括至少一个块状背电极层,至少一个,尤其是欧姆接触层,其通过施加至少一层而获得。或基本上包含至少一种金属硫属化物,其中金属硫属化物的金属,特别是选自钼,钨,钽,钴和/或铌,以及金属硫属化物的硫属元素,特别是选自硒和/或硫,通过使用至少一个金属卤代金属烷进行物理或化学气相沉积,或通过施加至少一个金属层(第一层)而获得,其中第一层和块状背电极层的组成,特别是分别使用的金属,或金属层和块状背电极中的更多金属关于至少一种,特别是所有这些金属,不同意,含有或基本不含钼, W,Ta,Nb和/或Co使用至少一种金属源进行物理气相沉积,并在硫属元素,特别是硒和/或硫的气氛中,在高于300摄氏度,优选高于350摄氏度的温度下处理该金属层/或在Chalkogenwasserstoff-中,特别是在H2S和/或H2Se气氛中,形成金属ch烷金属盐(第二层)。此外,本发明涉及该多层背面电极在生产薄膜太阳能电池和薄膜太阳能模块,光伏薄膜太阳能电池和包含根据本发明的多层背面电极的模块中的用途,以及涉及用于制造薄膜太阳能电池的方法。生产薄膜光伏太阳能电池和组件。

著录项

  • 公开/公告号DE102012205377A1

    专利类型

  • 公开/公告日2013-10-02

    原文格式PDF

  • 申请/专利权人 ROBERT BOSCH GMBH;

    申请/专利号DE201210205377

  • 发明设计人 VOLKER PROBST;

    申请日2012-04-02

  • 分类号H01L31/0224;H01L31/0749;H01L31/0392;H01L31/18;

  • 国家 DE

  • 入库时间 2022-08-21 16:21:44

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