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Negative-acting active ray-sensitive or radiation-sensitive resin composition, negative-acting active ray-sensitive or radiation-sensitive film, pattern forming method, and manufacturing method of electronic device

机译:负性活性射线敏感性或放射敏感性树脂组合物,负性活性射线敏感性或放射敏感性膜,图案形成方法和电子设备的制造方法

摘要

Particularly, in the formation of a pattern of ultrafine (for example, a line width of 50 nm or less), it is possible to form a pattern having excellent sensitivity, resolution, PED stability, and line edge roughness (LER) And a mask blank having a negative active ray-sensitive or radiation-sensitive film, a negative active ray-sensitive or radiation-sensitive film using the same, a pattern forming method, and an electron A method of manufacturing a device is provided. Mask blank is, (A) to by a polymer having a repeating unit represented by the general formula (1) compound and, (B) irradiation of actinic ray or radiation, and the volume is 130Å 3 above comprising a compound capable of generating an 2000Å 3 or less acid Sensitive negative active radiation-sensitive or radiation-sensitive resin composition, and negative-acting actinic ray-sensitive or radiation-sensitive film and negative-acting actinic radiation-sensitive or radiation-sensitive film using the negative active radiation or radiation-sensitive resin composition. Wherein R 1 represents a hydrogen atom, an alkyl group or a halogen atom, R 2 and R 3 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aralkyl group or an aryl group, R 4 represents a hydrogen atom An alkyl group, a cycloalkyl group, an aryl group, or an acyl group; L represents a single bond or a divalent linking group; Ar represents an aromatic group; and m and n each independently represent an integer of 1 or more.
机译:特别地,在形成超细的图案(例如,线宽为50nm或更小)时,可以形成具有优异的灵敏度,分辨率,PED稳定性和线边缘粗糙度(LER)和掩模的图案。提供具有负活性射线敏感或辐射敏感膜的坯料,使用其的负活性射线敏感或辐射敏感膜,图案形成方法和电子。提供一种器件制造方法。掩模坯料为(A)〜具有通式(1)表示的重复单元的聚合物,(B)光化射线或放射线的照射,其体积为130Å 3 包含能够产生2000Å 3 以下酸的化合物,对光敏感的负活性辐射敏感或对辐射敏感的树脂组合物,对光起反作用的射线敏感或对辐射敏感的膜和负性光化性使用负活性辐射或辐射敏感树脂组合物的辐射敏感或辐射敏感膜。其中R 1 代表氢原子,烷基或卤素原子,R 2 和R 3 各自独立地代表氢原子,烷基,环烷基,芳烷基或芳基,R 4 表示氢原子。烷基,环烷基,芳基或酰基。 L代表单键或二价连接基团; Ar表示芳香族基团; m和n分别独立地表示1以上的整数。

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