METHOD FOR SITE-CONTROLLED GROWTH OF BORON NITRIDE COMPOUND SEMICONDUCTOR BY USING PATTERNED METAL SUBSTRATE

摘要

According to the present invention, a method injects raw material gas including boron or nitrogen or both boron and nitrogen onto a metal pattern after forming the metal pattern so as to induce a chemical reaction between the boron and the nitrogen on the metal pattern through a catalyst effect of metal, thereby selectively forming a boron nitride compound on the metal pattern. Therefore, the method can be compatible with a microprocessing technology used for microelectronics without using the existing lithography method after growth, and a boron nitride thin film can be obtained without exposure to the remaining organic material.