首页> 外国专利> MONOLITHIC 3D INTEGRATION TECHNOLOGY-BASED CACHE MEMORY

MONOLITHIC 3D INTEGRATION TECHNOLOGY-BASED CACHE MEMORY

机译:基于单片3D集成技术的缓存

摘要

The present invention relates to a monolithic 3D integration technology-based vertical word line cache memory. A plurality of layers are stacked in the monolithic 3D integration technology-based cache memory according to an embodiment of the present invention. The monolithic 3D integration technology-based cache memory according to an embodiment of the present invention includes: a first layer in which a first bit line is formed; a second layer stacked on the first layer and including a second bit line formed therein; and a vertical word line for vertically connecting the first bit line and the second bit line. Accordingly, the present invention can greatly reduce the access time and power consumption of the cache memory.;COPYRIGHT KIPO 2018
机译:基于整体3D集成技术的垂直字线高​​速缓冲存储器技术领域本发明涉及基于整体3D集成技术的垂直字线高​​速缓冲存储器。根据本发明的实施例,在基于单片3D集成技术的高速缓冲存储器中堆叠有多个层。根据本发明实施例的基于单片3D集成技术的高速缓冲存储器包括:第一层,其中形成第一位线;以及第二层堆叠在第一层上并包括形成在其中的第二位线;垂直字线,用于垂直连接第一位线和第二位线。因此,本发明可以大大减少高速缓冲存储器的访问时间和功耗。COPYRIGHT KIPO 2018

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号