Selective photo-thermal modulation of ZnO/Pt interface for monolithic 3D integration of oxide-based resistive random access memory

Park Chul Jin; Kim Jin Whan; Namgung Seok Daniel; Kwon Jang-Yeon; Shin Moo Whan

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Selective photo-thermal modulation of ZnO/Pt interface for monolithic 3D integration of oxide-based resistive random access memory

机译：ZnO / Pt接口的选择性光热调制，用于整体基于氧化物基电阻随机存取存储器的整体三维集成

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《Applied Surface Science》 |2020年第1期|146380.1-146380.8|共8页
作者
Park Chul Jin; Kim Jin Whan; Namgung Seok Daniel; Kwon Jang-Yeon; Shin Moo Whan;
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Yonsei Univ Yonsei Inst Convergence Technol Sch Integrated Technol 162-1 Songdo Dong Incheon 406840 South Korea;

Yonsei Univ Yonsei Inst Convergence Technol Sch Integrated Technol 162-1 Songdo Dong Incheon 406840 South Korea;

Yonsei Univ Yonsei Inst Convergence Technol Sch Integrated Technol 162-1 Songdo Dong Incheon 406840 South Korea;

Yonsei Univ Yonsei Inst Convergence Technol Sch Integrated Technol 162-1 Songdo Dong Incheon 406840 South Korea;

Yonsei Univ Yonsei Inst Convergence Technol Sch Integrated Technol 162-1 Songdo Dong Incheon 406840 South Korea;

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1. High-efficiency magnetic modulation in Ti/ZnO/Pt resistive random-access memory devices using amorphous zinc oxide film [J] . Ren Shuxia, Dong Weichao, Tang Hao, Applied Surface Science . 2019,第SEPa15期

机译：使用非晶氧化锌膜的Ti / ZnO / Pt电阻随机存取存储器件中的高效磁调制
2. High-efficiency magnetic modulation in Ti/ZnO/Pt resistive random-access memory devices using amorphous zinc oxide film [J] . Ren Shuxia, Dong Weichao, Tang Hao, Applied Surface Science . 2019,第Sepa15期

机译：使用非晶氧化锌膜的Ti / ZnO / PT电阻随机存取存储器件的高效磁力调制
3. Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing [J] . Wu Pei-Yu, Zheng Hao-Xuan, Shih Chih-Cheng, IEEE Electron Device Letters . 2020,第3期

机译：通过氨化退火改进氧化锌基电阻随机存取存储器的电阻切换特性
4. Verilog-A compact model for oxide-based resistive random access memory (RRAM) [C] . Jiang Zizhen, Yu Shimeng, Wu Yi, International Conference on Simulation of Semiconductor Processes and Devices . 2014

机译：Verilog-基于氧化物的电阻式随机存取存储器（RRAM）的紧凑模型
5. Impacts of Ion Irradiation on Hafnium oxide-based Resistive Random Access Memory Devices. [D] . He, Xiaoli. 2013

机译：离子辐照对基于氧化oxide的电阻式随机存取存储设备的影响。
6. Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique [O] . Chi-Chang Wu, Hsin-Chiang You, Yu-Hsien Lin, 2018

机译：电极表面形态对使用铜化学位移技术制造的基于ZnO的电阻型随机存取存储器的影响
7. Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory [O] . Stefan Petzold, S. U. Sharath, Jonas Lemke, 2019

机译：对氧化铪基电阻随机存取存储器的重离子辐射效应

Selective photo-thermal modulation of ZnO/Pt interface for monolithic 3D integration of oxide-based resistive random access memory

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