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机译:使用非晶氧化锌膜的Ti / ZnO / Pt电阻随机存取存储器件中的高效磁调制
Shijiazhuang Tiedao Univ, Sch Mat Sci & Engn, Shijiazhuang 050043, Hebei, Peoples R China;
Hebei Univ Sci & Technol, Sch Elect Engn, Shijiazhuang 050018, Hebei, Peoples R China;
Univ Washington, Mol Engn & Sci Inst, Seattle, WA 98195 USA;
Shijiazhuang Tiedao Univ, Sch Mat Sci & Engn, Shijiazhuang 050043, Hebei, Peoples R China;
Shijiazhuang Tiedao Univ, Sch Mat Sci & Engn, Shijiazhuang 050043, Hebei, Peoples R China;
Shijiazhuang Tiedao Univ, Sch Mat Sci & Engn, Shijiazhuang 050043, Hebei, Peoples R China;
Shijiazhuang Tiedao Univ, Sch Mat Sci & Engn, Shijiazhuang 050043, Hebei, Peoples R China;
Shijiazhuang Tiedao Univ, Sch Mat Sci & Engn, Shijiazhuang 050043, Hebei, Peoples R China;
Shijiazhuang Tiedao Univ, Sch Mat Sci & Engn, Shijiazhuang 050043, Hebei, Peoples R China;
Resistive random-access memory; Electrode-insulator interface; Amorphous zinc oxide film; Magnetization switching;
机译:使用非晶氧化锌膜的Ti / ZnO / PT电阻随机存取存储器件的高效磁力调制
机译:在阵列应用的Ti / SiN / NiN / Pt双层电阻式随机存取存储设备中,可保护存储状态免受泄漏电流的影响
机译:利用合规电流水平,可控制氧化镍薄膜电阻随机存取存储器的电阻切换
机译:直流磁控溅射制备二氧化钛掺杂的氧化锌(ZNO:TI)和镓掺杂的氧化锌(ZNO:GA)薄膜的退火效应
机译:通过调制掺杂的氧化锌/氧化锌镁薄膜改善了透明导电氧化物。
机译:通过电检测磁共振研究TiN / Ti / HfO2 / TiN电阻性随机存取存储器的总电离剂量效应
机译:柔性光电器件顺应性基板上非晶铟-镓-氧化锌薄膜的机械性能