Hybrid wafer dicing approach using split-beam laser scribing process and plasma etch process

摘要

Methods of dicing semiconductor wafers-each wafer having a plurality of integrated circuits-are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask on a semiconductor wafer, the mask consisting of a layer covering and protecting the integrated circuits. The mask is then patterned by a split laser beam laser scribing process, e.g., a split laser beam laser scribing process, to provide a patterned mask having gaps between the integrated circuits, Areas. Then, to singulate the integrated circuits, the semiconductor wafer is plasma etched through the gaps in the patterned mask.;