FIN- FINFET INTEGRATED FIN-BASED FIELD EFFECT TRANSISTOR FINFET AND METHOD OF FABRICATION OF SAME

摘要

A method of fabricating such an element on an integrated pin-based field effect transistor (FinFET) and a bulk wafer having an EPI-forming fin height over a Shallow Trench Isolation (STI) region is disclosed. The FinFET channel is placed over the STI region in the semiconductor bulk and the pin extends into the source and drain regions beyond the STI region and the source and drain regions are implanted into the semiconductor bulk. Using the bulk source and drain regions, a reduced external FinFET resistance is provided and the pin extends into the bulk source and drain regions, providing improved thermal properties over conventional SOI (Silicon On Insulator) devices.