METHOD FOR FORMING A FILM BY ATOMIC LAYER DEPOSITION AND METHOD FOR GEOMETRICALLY CONTROLLING FILM GROWTH BY ATOMIC LAYER DEPOSITION

摘要

(I) adsorbing a metal-containing precursor for film formation onto a concave or convex surface pattern of a substrate; (ii) oxidizing the adsorbed precursor to form a metal oxide sub-layer; (iii) adsorbing a metal-free inhibitor on the metal oxide sub-layer more or less above or below the sidewall of the concave or convex surface pattern, wherein the adsorption of the metal-free inhibitor causes An antagonistic process for subsequent adsorption; (iv) repeating the steps (i) and (iii) to form a film composed of a plurality of metal oxide sub-layers, further suppressing vertical growth more than horizontal growth of the film by the step (iii); RTI ID = 0.0 atomic layer deposition. /RTI ;