Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method

摘要

Titanium dioxide (TiOsub2/sub) films were deposited by plasma enhanced atomic layer deposition (PE-ALD) system using tetrakis-dimethylamido-titanium (TDMAT) at 250 °C. We applied a new source feeding method, known as Discrete Feeding Method (DFM), to PE-ALD TiOsub2/sub process for comparing the deposition rate, the physical and electrical film properties with the films deposited by conventional ALD method. Various analytical studies were carried out to investigate the change of TiOsub2/sub thin film characteristics due to DFM application. As a result, the optimal process condition was obtained with high physical properties and productivity while keeping electrical characteristics equivalent to those of the conventional ALD condition.