Titanium Dioxide Films Grown by Plasma-Enhanced Atomic Layer Deposition

摘要

Plasma-enhanced atomic layer deposition (PEALD) of titanium dioxide from titanium isopropoxide (TTIP, Ti(OCH(CH{sub}3){sub}2){sub}4) and oxygen radicals was studied. The growth rate of the films was 0.39 A per cycle at substrate temperature of 225. XRD peak at the 2θ value of anatase was detected with long plasma pulse time, and RBS data and refractive indices showed TiO{sub}2 films by PEALD had a high density as much as bulk anatase indicating PEALD is an appropriate technique for increasing the film density and crystallinity.