FIN STRUCTURE OF SEMICONDUCTOR DEVICE MANUFACTURING METHOD THEREOF AND MANUFACTURING METHOD OF ACTIVE REGION OF SEMICONDUCTOR DEVICE

摘要

A method for fabricating an active region of a semiconductor device includes forming an implant region in a substrate. The implant region is adjacent to the top surface of the substrate. A cleaning process is performed on the upper surface of the substrate. The top surface of the substrate is baked. An epitaxial layer is formed on the top surface of the substrate.