III-V SEMICONDUCTOR STRUCTURE COMPRISING AN ACTIVE SEMICONDUCTOR LAYER OF THE III-V TYPE ON A BUFFER LAYER STACK AND METHOD FOR PRODUCING SEMICONDUCTOR STRUCTURE

摘要

The present invention relates to a semiconductor structure, - a buffer layer stack comprising a plurality of III-V material layers, wherein the buffer layer stack comprises at least one layered substructure, each layered substructure having a first buffer layer and a second buffer layer, Wherein the lower surface of each of the second buffer layers is lower than the upper surface of each of the first buffer layers, Said buffer layer stack having an Al content; - an active semiconductor layer of the III-V type provided on the buffer layer stack And Wherein the surface of each of the relaxed layers is sufficiently roughened to inhibit relaxation of each of the second buffer layers including a Root Mean Square (RMS) roughness greater than 1 nm; And a method of manufacturing the semiconductor structure.