Built-in compliance in structures for testing leakage currents and dielectric breakdown of dielectric materials of metallization systems of semiconductor devices

摘要

A test structure (250) for monitoring dielectric properties of a metallization system of a semiconductor device, the test structure (250) comprising: a test area (260) formed over a substrate and a plurality of test metal areas formed in a dielectric material (211) of a metallization level; having; a current limiting structure (240) formed over the substrate; and a connection structure (230) connected to the test area (260) and the current limiting structure (240), wherein the connection structure (230) is configured to electrically connect the current limiting structure (240) and the test area (260) and applying a Enable voltage in a specified voltage range across the test area (260) and the current limiting structure (240) by means of an external test device; wherein the current limiting structure (240) comprises a resistor structure (242) formed at least partially in the dielectric material (211) and having a higher withstand voltage compared to the test area (260).