A method of producing a vanadium-doped SiC bulk single crystal and a vanadium-doped SiC substrate

摘要

Method for producing at least one semi-insulating bulk SiC crystal (2; 33) having a specific electrical resistance of at least 10 Ωcm and intended for the production of semiconductor and / or high-frequency components, wherein a) at least one crystal growth region (5, 36) of a growth crucible (3; SiC growth gas phase (9; 38) is generated and the SiC bulk single crystal (2; 33) is grown by deposition from the SiC growth gas phase (9; 38), b) the SiC growth gas phase (9; 38) is made of a SiC Source material (6; 31) located in a SiC storage area (4; 35) within the cultivation crucible (3; 34), material transport from the SiC storage area (4; 35) to a growth interface (3); C) the crystal growth region (5; 36) is supplied with vanadium as a dopant of the growing SiC bulk single crystal (2; 33), d) at the growth interface che (16; 39) of the growing SiC bulk single crystal (2; 33) is set at a growth temperature of at least 2250 ° C such that the SiC bulk single crystal (2; 33) doped with a vanadium dopant concentration greater than 5 x 10 cm grows, e) the material transport from the SiC storage area (4; 35) to the growth interface (16; 39) in addition to the temperature conditions prevailing in the culturing crucible (3; 34) by means of a further transport control measure (18; 25; 28; 31; 41) such that the growth temperature at the growth interface (16; 39) and the material transport to the growth interface (16; 39) can be influenced independently of one another.