Semiconductor device having a buried barrier layer with an interspersed pattern of doped and counter doped materials

摘要

Semiconductor device comprising: three connections; a drift region between two of the terminals, the drift region including an upper drift layer, a lower drift layer and a buried barrier layer between the upper and lower drift layers, wherein the upper and lower drift layers have a first doping type and wherein the buried barrier layer comprises an interspersed pattern of a first material and a second material, the first material having a second doping mode opposite to the first doping mode and the second material having the first doping type and a doping concentration other than the upper and lower drift layers.