part with a buried barrier layer with a patchwork pattern of doped and gegendotierten materials

摘要

part a:three lines;a driftbereich between two of the connectors, with the driftbereich upper driftschicht,a lower driftschicht and a buried barrier layer between the upper and lower driftschicht includeswith the upper and lower driftschicht a first dotierungsart) andthe buried barrier layer and a eingestreutes pattern from a first material and a second material includes,while the first material is one of the first dotierungsart opposite second dotierungsart has, and the second material, the first dotierungsart and other dotierungskonzentration than oby driftschicht and lower growth.