首页>
外国专利>
SCANDIUM-CONTAINING III-N ETCH-STOP LAYERS FOR SELECTIVE ETCHING OF III-NITRIDES AND RELATED MATERIALS
SCANDIUM-CONTAINING III-N ETCH-STOP LAYERS FOR SELECTIVE ETCHING OF III-NITRIDES AND RELATED MATERIALS
展开▼
机译:用于选择性刻蚀III型氮化物和相关材料的含III-N刻蚀停止层
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor device structure including a scandium (Sc)- or yttrium (Y)-containing material layer situated between a substrate and one or more overlying layers. The Sc- or Y-containing material layer serves as an etch-stop during fabrication of one or more devices from overlying layers situated above the Sc- or Y-containing material layer. The Sc- or Y-containing material layer can be grown within an epitaxial group III-nitride device structure for applications such as electronics, optoelectronics, and acoustoelectronics, and can improve the etch-depth accuracy, reproducibility and uniformity.
展开▼