METHOD FOR JOINING SEMICONDUCTOR CHIP USING NANO SIVER PASTE

摘要

To provide a method for joining a semiconductor chip to a substrate with a higher adhesive strength, the method allowing the reduction of the time for the joining even when a nano silver paste is pressed and sintered at temperatures of 300°C or lower and more specifically 270°C or lower for the application of die-bonding.SOLUTION: The method for joining a substrate and a semiconductor chip to each other includes the steps of: forming an organic coating layer made of an alkoxide group and/or a carboxylic acid group with 10 or less carbons around a silver nucleus made of the aggregate of silver atoms, applying a nano silver paste including nano silver particles containing the silver nucleus with crystallite diameters of 3 nm or less to the substrate, thereby forming a paste layer; arranging the semiconductor chip to the paste layer; sintering the paste layer at temperatures of 270°C or lower by heating the paste layer under the pressure condition; cooling the paste layer to at least 200°C or lower under a predetermined pressure condition, thereby joining the substrate and the semiconductor chip to each other.SELECTED DRAWING: Figure 5